inchange semiconductor isc product specification isc silicon npn power transistor 2SC3709 description low collector saturation voltage- : v ce( sat ) = 0.4v(max)@i c = 6a good linearity of h fe high switching speed complement to type 2sa1451 applications designed for high current switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current-continuous 12 a i b b base current-continuous 2 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3709 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; i b = 0 50 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 0.3a b 0.4 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 0.3a b 1.2 v i cbo collector cutoff current v cb = 60v; i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 a h fe-1 dc current gain i c = 1a; v ce = 1v 70 240 h fe-2 dc current gain i c = 6a; v ce = 1v 40 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 180 pf f t current-gain?bandwidth product i c = 1a; v ce = 5v 90 mhz switching times t on turn-on time 0.2 s t stg storage time 1.0 s t f fall time i b1 = -i b2 = 0.3a, r l = 5 ; v cc 30v, 0.2 s ? h fe- 1 classifications o y 70-140 120-240 isc website www.iscsemi.cn 2
|
